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| MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-H * * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Air conditioner, Small to medium size inverters, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (30.5) 11 7 15 25.5 7 15 25.5 2 7 (23.5) 5.5 1.2 Fig. 1 4 2.8 Fig. 2 8.0 6.35 1.65 3.4 9.5 18 28 45 8.6 1.5 5.5 76 93 106 Tab#250, t=0.8(Fig. 2) (22.45) P BuP EuP u BuN EuN N BvP EvP v BvN EvN BwP EwP w BwN EwN Tab#110, t=0.5(Fig. 1) 7 13 LABEL Note: All Transistor Units are Darlingtons. 1.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 20 20 100 1 200 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2000 1.47~1.96 15~20 90 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=0.28A -IC=20A (diode forward voltage) IC=20A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=20A, IB1=-IB2=0.4A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 150 2.0 2.5 1.5 -- 1.5 12 2.0 1.2 2.2 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 45 40 35 30 25 20 15 10 5 0 0 DC CURRENT GAIN hFE IB=1A IB=0.4A IB=0.2A IB=0.1A IB=0.04A VCE=5.0V VCE=2.0V Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 2.6 3.0 VCE=2.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 IB=0.28A Tj=25C Tj=125C VBE(sat) BASE CURRENT IB (A) SATURATION VOLTAGE VCE(sat) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) ts 10 1 7 5 VCC=300V 4 IB1=-IB2=0.4A Tj=25C 3 Tj=125C 2 tf 10 0 7 5 4 ton 3 10 0 2 3 4 5 7 10 1 4 3 IC=20A 2 IC=7A 1 Tj=25C Tj=125C 5 7 10 -2 IC=15A 0 2 3 4 5 7 10 -1 SWITCHING TIME 2 3 45 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 VCC=300V IC=20A IB1=0.4A 10 1 Tj=25C Tj=125C 7 5 4 3 2 10 0 7 5 4 3 3 4 5 7 10 -1 2 3 4 5 7 10 0 23 REVERSE BIAS SAFE OPERATING AREA 50 COLLECTOR CURRENT IC (A) 45 40 35 Tj=125C 30 25 20 15 10 5 0 0 100 200 300 400 500 600 700 800 IB2=-0.5A SWITCHING TIME ts, tf (s) ts tf BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 100s 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA 50 s 10 DC m DERATING FACTOR (%) 1m 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 0 20 s s 5m s s 10 0 7 5 3 2 NON-REPETITIVE TC=25C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 1.6 1.4 1.2 Zth (j-c) (C/ W) 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 0 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 Irr (A), Qrr (c) 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=0.4A 3 Tj=25C 2 Tj=125C 10 1 7 5 3 2 10 2 Irr Qrr 10 1 trr (s) Feb.1999 trr 10 0 10 0 7 5 3 2 10 -1 10 -1 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 57 3.2 2.8 2.4 Zth (j-c) (C/ W) 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) |
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